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羅斌森

  • ECH8690-TL-H

  • Manufacturer : ON Semiconductor
    Packaging : Cut Tape (CT)
    Alternate Packaging
    Part Status : Active
    FET Type : N and P-Channel
    FET Feature : Logic Level Gate, 4V Drive
    Drain to Source Voltage (Vdss) : 60V
    Current - Continuous Drain (Id) @ 25°C : 4.7A, 3.5A
    Rds On (Max) @ Id, Vgs : 55 mOhm @ 2A, 10V
    Gate Charge (Qg) (Max) @ Vgs : 18nC @ 10V
    Input Capacitance (Ciss) (Max) @ Vds : 955pF @ 20V
    Power - Max : 1.5W
    Operating Temperature : 150°C (TJ)
    Mounting Type : Surface Mount
    Package / Case : 8-SMD, Flat Lead
    Supplier Device Package : 8-ECH

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