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產(chǎn)品系列

羅斌森

  • EFC6601R-TR

  • Manufacturer : ON Semiconductor
    Packaging : Cut Tape (CT)
    Alternate Packaging
    Part Status : Active
    FET Type : 2 N-Channel (Dual)
    FET Feature : Logic Level Gate, 2.5V Drive
    Gate Charge (Qg) (Max) @ Vgs : 48nC @ 4.5V
    Power - Max : 2W
    Operating Temperature : 150°C (TJ)
    Mounting Type : Surface Mount
    Package / Case : 6-XFBGA, FCBGA
    Supplier Device Package : EFCP2718-6CE-020

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