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羅斌森

  • FDC6301N

  • Manufacturer : ON Semiconductor
    Packaging : Cut Tape (CT)
    Alternate Packaging
    Part Status : Active
    FET Type : 2 N-Channel (Dual)
    FET Feature : Logic Level Gate
    Drain to Source Voltage (Vdss) : 25V
    Current - Continuous Drain (Id) @ 25°C : 220mA
    Rds On (Max) @ Id, Vgs : 4 Ohm @ 400mA, 4.5V
    Vgs(th) (Max) @ Id : 1.5V @ 250μA
    Gate Charge (Qg) (Max) @ Vgs : 0.7nC @ 4.5V
    Input Capacitance (Ciss) (Max) @ Vds : 9.5pF @ 10V
    Power - Max : 700mW
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Surface Mount
    Package / Case : SOT-23-6 Thin, TSOT-23-6
    Supplier Device Package : SuperSOT?-6

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