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羅斌森

  • FJP13009H2TU

  • Manufacturer : ON Semiconductor
    Packaging : Tube
    Part Status : Active
    Transistor Type : NPN
    Current - Collector (Ic) (Max) : 12A
    Voltage - Collector Emitter Breakdown (Max) : 400V
    Vce Saturation (Max) @ Ib, Ic : 3V @ 3A, 12A
    DC Current Gain (hFE) (Min) @ Ic, Vce : 15 @ 5A, 5V
    Power - Max : 100W
    Frequency - Transition : 4MHz
    Operating Temperature : 150°C (TJ)
    Mounting Type : Through Hole
    Package / Case : TO-220-3
    Supplier Device Package : TO-220-3

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