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產(chǎn)品系列

羅斌森

  • HGTG18N120BND

  • Manufacturer : ON Semiconductor
    Packaging : Tube
    Part Status : Active
    IGBT Type : NPT
    Voltage - Collector Emitter Breakdown (Max) : 1200V
    Current - Collector (Ic) (Max) : 54A
    Current - Collector Pulsed (Icm) : 160A
    Vce(on) (Max) @ Vge, Ic : 2.7V @ 15V, 18A
    Power - Max : 390W
    Switching Energy : 1.9mJ (on), 1.8mJ (off)
    Input Type : Standard
    Gate Charge : 165nC
    Td (on/off) @ 25°C : 23ns/170ns
    Test Condition : 960V, 18A, 3 Ohm, 15V
    Reverse Recovery Time (trr) : 75ns
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Through Hole
    Package / Case : TO-247-3
    Supplier Device Package : TO-247

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