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羅斌森

  • HGTG20N60B3D

  • Manufacturer : ON Semiconductor
    Packaging : Tube
    Part Status : Not For New Designs
    Voltage - Collector Emitter Breakdown (Max) : 600V
    Current - Collector (Ic) (Max) : 40A
    Current - Collector Pulsed (Icm) : 160A
    Vce(on) (Max) @ Vge, Ic : 2V @ 15V, 20A
    Power - Max : 165W
    Switching Energy : 475μJ (on), 1.05mJ (off)
    Input Type : Standard
    Gate Charge : 80nC
    Reverse Recovery Time (trr) : 55ns
    Operating Temperature : -40°C ~ 150°C (TJ)
    Mounting Type : Through Hole
    Package / Case : TO-247-3
    Supplier Device Package : TO-247

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