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羅斌森

  • HGT1S7N60A4DS

  • Manufacturer : ON Semiconductor
    Packaging : Tube
    Part Status : Obsolete
    Voltage - Collector Emitter Breakdown (Max) : 600V
    Current - Collector (Ic) (Max) : 34A
    Current - Collector Pulsed (Icm) : 56A
    Vce(on) (Max) @ Vge, Ic : 2.7V @ 15V, 7A
    Power - Max : 125W
    Switching Energy : 55μJ (on), 60μJ (off)
    Input Type : Standard
    Gate Charge : 37nC
    Td (on/off) @ 25°C : 11ns/100ns
    Test Condition : 390V, 7A, 25 Ohm, 15V
    Reverse Recovery Time (trr) : 34ns
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Surface Mount
    Package / Case : TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
    Supplier Device Package : TO-263AB

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