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羅斌森

  • TN2106N3-G

  • Manufacturer : Microchip Technology
    Packaging : Bulk
    Part Status : Active
    FET Type : N-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 60V
    Current - Continuous Drain (Id) @ 25°C : 300mA (Tj)
    Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
    Rds On (Max) @ Id, Vgs : 2.5 Ohm @ 500mA, 10V
    Vgs(th) (Max) @ Id : 2V @ 1mA
    Vgs (Max) : ±20V
    Input Capacitance (Ciss) (Max) @ Vds : 50pF @ 25V
    Power Dissipation (Max) : 740mW (Tc)
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Through Hole
    Supplier Device Package : TO-92-3
    Package / Case : TO-226-3, TO-92-3 (TO-226AA)

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