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羅斌森

  • VN2210N2

  • Manufacturer : Microchip Technology
    Packaging : Bulk
    Part Status : Active
    FET Type : N-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 100V
    Current - Continuous Drain (Id) @ 25°C : 1.7A (Tj)
    Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V
    Rds On (Max) @ Id, Vgs : 350 mOhm @ 4A, 10V
    Vgs(th) (Max) @ Id : 2.4V @ 10mA
    Vgs (Max) : ±20V
    Input Capacitance (Ciss) (Max) @ Vds : 500pF @ 25V
    Power Dissipation (Max) : 360mW (Tc)
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Through Hole
    Supplier Device Package : TO-39
    Package / Case : TO-205AD, TO-39-3 Metal Can

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