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羅斌森

  • NTMKE4891NT1G

  • Manufacturer : ON Semiconductor
    Packaging : Tape & Reel (TR)
    Part Status : Obsolete
    FET Type : N-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 25V
    Current - Continuous Drain (Id) @ 25°C : 26.7A (Ta), 151A (Tc)
    Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
    Rds On (Max) @ Id, Vgs : 2.6 mOhm @ 29A, 10V
    Vgs(th) (Max) @ Id : 2.4V @ 250μA
    Gate Charge (Qg) (Max) @ Vgs : 66nC @ 10V
    Vgs (Max) : ±20V
    Input Capacitance (Ciss) (Max) @ Vds : 4360pF @ 15V
    Power Dissipation (Max) : 2.8W (Ta), 89W (Tc)
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Surface Mount
    Supplier Device Package : 4-ICEPAK - E1 PAD (6.3x4.9)
    Package / Case : 5-ICEPAK

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