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羅斌森

  • NIF9N05CLT1G

  • Manufacturer : ON Semiconductor
    Packaging : Tape & Reel (TR)
    Part Status : Obsolete
    FET Type : N-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 59V
    Current - Continuous Drain (Id) @ 25°C : 2.6A (Ta)
    Drive Voltage (Max Rds On, Min Rds On) : 3V, 10V
    Rds On (Max) @ Id, Vgs : 125 mOhm @ 2.6A, 10V
    Vgs(th) (Max) @ Id : 2.5V @ 100μA
    Gate Charge (Qg) (Max) @ Vgs : 7nC @ 4.5V
    Vgs (Max) : ±15V
    Input Capacitance (Ciss) (Max) @ Vds : 250pF @ 35V
    Power Dissipation (Max) : 1.69W (Ta)
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Surface Mount
    Supplier Device Package : SOT-223
    Package / Case : TO-261-4, TO-261AA

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