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羅斌森

  • NSBC115EDXV6T1G

  • Manufacturer : ON Semiconductor
    Packaging : Cut Tape (CT)
    Alternate Packaging
    Part Status : Active
    Transistor Type : 2 NPN - Pre-Biased (Dual)
    Current - Collector (Ic) (Max) : 100mA
    Voltage - Collector Emitter Breakdown (Max) : 50V
    Resistor - Base (R1) : 100 kOhms
    Resistor - Emitter Base (R2) : 100 kOhms
    DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 5mA, 10V
    Vce Saturation (Max) @ Ib, Ic : 250mV @ 300μA, 10mA
    Current - Collector Cutoff (Max) : 500nA
    Power - Max : 500mW
    Package / Case : SOT-563, SOT-666
    Supplier Device Package : SOT-563

極速報(bào)價(jià)

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