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羅斌森

  • NTD4860NA-1G

  • Manufacturer : ON Semiconductor
    Packaging : Tube
    Part Status : Obsolete
    FET Type : N-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 25V
    Current - Continuous Drain (Id) @ 25°C : 10.4A (Ta), 65A (Tc)
    Rds On (Max) @ Id, Vgs : 7.5 mOhm @ 30A, 10V
    Vgs(th) (Max) @ Id : 2.5V @ 250μA
    Gate Charge (Qg) (Max) @ Vgs : 21.8nC @ 10V
    Input Capacitance (Ciss) (Max) @ Vds : 1308pF @ 12V
    Power Dissipation (Max) : 1.28W (Ta), 50W (Tc)
    Operating Temperature : -55°C ~ 175°C (TJ)
    Mounting Type : Through Hole
    Supplier Device Package : I-PAK
    Package / Case : TO-251-3 Short Leads, IPak, TO-251AA

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