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羅斌森

  • NVMFD5C668NLT1G

  • Manufacturer : ON Semiconductor
    Packaging : Cut Tape (CT)
    Alternate Packaging
    Part Status : Active
    FET Type : 2 N-Channel (Dual)
    FET Feature : Standard
    Drain to Source Voltage (Vdss) : 60V
    Current - Continuous Drain (Id) @ 25°C : 15.5A (Ta), 68A (Tc)
    Rds On (Max) @ Id, Vgs : 6.5 mOhm @ 20A, 10V
    Vgs(th) (Max) @ Id : 2V @ 50μA
    Gate Charge (Qg) (Max) @ Vgs : 21.3nC @ 10V
    Input Capacitance (Ciss) (Max) @ Vds : 1440pF @ 25V
    Power - Max : 3W (Ta), 57.5W (Tc)
    Operating Temperature : -55°C ~ 175°C (TJ)
    Mounting Type : Surface Mount
    Package / Case : 8-PowerTDFN
    Supplier Device Package : 8-DFN (5x6) Dual Flag (SO8FL-Dual)

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