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羅斌森

  • BQ4014MB-120

  • Manufacturer : Texas Instruments
    Packaging : Tube
    Part Status : Obsolete
    Memory Type : Non-Volatile
    Memory Format : NVSRAM
    Technology : NVSRAM (Non-Volatile SRAM)
    Memory Size : 2Mb (256K x 8)
    Write Cycle Time - Word, Page : 120ns
    Access Time : 120ns
    Memory Interface : Parallel
    Voltage - Supply : 4.75V ~ 5.5V
    Operating Temperature : 0°C ~ 70°C (TA)
    Mounting Type : Through Hole
    Package / Case : 32-DIP Module (0.61", 15.49mm)
    Supplier Device Package : 32-DIP Module (18.42x52.96)

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