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羅斌森

  • CSD16411Q3

  • Manufacturer : Texas Instruments
    Packaging : Cut Tape (CT)
    Alternate Packaging
    Series : NexFET?
    Part Status : Active
    FET Type : N-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 25V
    Current - Continuous Drain (Id) @ 25°C : 14A (Ta), 56A (Tc)
    Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
    Rds On (Max) @ Id, Vgs : 10 mOhm @ 10A, 10V
    Vgs(th) (Max) @ Id : 2.3V @ 250μA
    Gate Charge (Qg) (Max) @ Vgs : 3.8nC @ 4.5V
    Vgs (Max) : +16V, -12V
    Input Capacitance (Ciss) (Max) @ Vds : 570pF @ 12.5V
    Power Dissipation (Max) : 2.7W (Ta)
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Surface Mount
    Supplier Device Package : 8-VSON (3.3x3.3)
    Package / Case : 8-PowerVDFN

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