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羅斌森

  • CSD25304W1015

  • Manufacturer : Texas Instruments
    Packaging : Cut Tape (CT)
    Alternate Packaging
    Series : NexFET?
    Part Status : Active
    FET Type : P-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 20V
    Current - Continuous Drain (Id) @ 25°C : 3A (Ta)
    Drive Voltage (Max Rds On, Min Rds On) : 1.8V, 4.5V
    Rds On (Max) @ Id, Vgs : 32.5 mOhm @ 1.5A, 4.5V
    Vgs(th) (Max) @ Id : 1.15V @ 250μA
    Gate Charge (Qg) (Max) @ Vgs : 4.4nC @ 4.5V
    Vgs (Max) : ±8V
    Input Capacitance (Ciss) (Max) @ Vds : 595pF @ 10V
    Power Dissipation (Max) : 750mW (Ta)
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Surface Mount
    Supplier Device Package : 6-DSBGA
    Package / Case : 6-UFBGA, DSBGA

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