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羅斌森

  • CSD25481F4

  • Manufacturer : Texas Instruments
    Packaging : Cut Tape (CT)
    Alternate Packaging
    Series : NexFET?
    Part Status : Active
    FET Type : P-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 20V
    Current - Continuous Drain (Id) @ 25°C : 2.5A (Ta)
    Drive Voltage (Max Rds On, Min Rds On) : 1.8V, 4.5V
    Rds On (Max) @ Id, Vgs : 88 mOhm @ 500mA, 8V
    Vgs(th) (Max) @ Id : 1.2V @ 250μA
    Gate Charge (Qg) (Max) @ Vgs : 0.913nC @ 4.5V
    Vgs (Max) : -12V
    Input Capacitance (Ciss) (Max) @ Vds : 189pF @ 10V
    Power Dissipation (Max) : 500mW (Ta)
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Surface Mount
    Supplier Device Package : 3-PICOSTAR
    Package / Case : 3-XFDFN

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