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羅斌森

  • CSD85312Q3E

  • Manufacturer : Texas Instruments
    Packaging : Cut Tape (CT)
    Alternate Packaging
    Series : NexFET?
    Part Status : Active
    FET Type : 2 N-Channel (Dual) Common Source
    FET Feature : Logic Level Gate, 5V Drive
    Drain to Source Voltage (Vdss) : 20V
    Current - Continuous Drain (Id) @ 25°C : 39A
    Rds On (Max) @ Id, Vgs : 12.4 mOhm @ 10A, 8V
    Vgs(th) (Max) @ Id : 1.4V @ 250μA
    Gate Charge (Qg) (Max) @ Vgs : 15.2nC @ 4.5V
    Input Capacitance (Ciss) (Max) @ Vds : 2390pF @ 10V
    Power - Max : 2.5W
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Surface Mount
    Package / Case : 8-PowerVDFN
    Supplier Device Package : 8-VSON (3.3x3.3)

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