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產品系列

羅斌森

  • CSD86330Q3D

  • Manufacturer : Texas Instruments
    Packaging : Cut Tape (CT)
    Alternate Packaging
    Series : NexFET?
    Part Status : Active
    FET Type : 2 N-Channel (Half Bridge)
    FET Feature : Logic Level Gate
    Drain to Source Voltage (Vdss) : 25V
    Current - Continuous Drain (Id) @ 25°C : 20A
    Rds On (Max) @ Id, Vgs : 9.6 mOhm @ 14A, 8V
    Vgs(th) (Max) @ Id : 2.1V @ 250μA
    Gate Charge (Qg) (Max) @ Vgs : 6.2nC @ 4.5V
    Input Capacitance (Ciss) (Max) @ Vds : 920pF @ 12.5V
    Power - Max : 6W
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Surface Mount
    Package / Case : 8-PowerLDFN
    Supplier Device Package : 8-LSON (3.3x3.3)

極速報價

型號
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