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  • CSD86356Q5DT

  • Manufacturer : Texas Instruments
    Packaging : Cut Tape (CT)
    Alternate Packaging
    Series : NexFET?
    Part Status : Active
    FET Type : 2 N-Channel (Half Bridge)
    FET Feature : Logic Level Gate, 5V Drive
    Drain to Source Voltage (Vdss) : 25V
    Current - Continuous Drain (Id) @ 25°C : 40A (Ta)
    Rds On (Max) @ Id, Vgs : 4.5 mOhm @ 20A, 5V, 0.8 mOhm @ 20A, 5V
    Vgs(th) (Max) @ Id : 1.85V @ 250μA, 1.5V @ 250μA
    Gate Charge (Qg) (Max) @ Vgs : 7.9nC @ 4.5V, 19.3nC @ 4.5V
    Input Capacitance (Ciss) (Max) @ Vds : 1.04nF @ 12.5V, 2.51nF @ 12.5V
    Power - Max : 12W (Ta)
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Surface Mount
    Package / Case : 8-PowerTDFN
    Supplier Device Package : 8-VSON-CLIP (5x6)

極速報價

型號
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