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羅斌森
  • BCW66GLT1G

  • Manufacturer : ON Semiconductor
    Packaging : Cut Tape (CT)
    Alternate Packaging
    Part Status : Active
    Transistor Type : NPN
    Current - Collector (Ic) (Max) : 800mA
    Voltage - Collector Emitter Breakdown (Max) : 45V
    Vce Saturation (Max) @ Ib, Ic : 700mV @ 50mA, 500mA
    Current - Collector Cutoff (Max) : 20nA
    DC Current Gain (hFE) (Min) @ Ic, Vce : 160 @ 100mA, 1V
    Power - Max : 300mW
    Frequency - Transition : 100MHz
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Surface Mount
    Package / Case : TO-236-3, SC-59, SOT-23-3
    Supplier Device Package : SOT-23-3 (TO-236)

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