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羅斌森

  • BD676G

  • Manufacturer : ON Semiconductor
    Packaging : Bulk
    Part Status : Active
    Transistor Type : PNP - Darlington
    Current - Collector (Ic) (Max) : 4A
    Voltage - Collector Emitter Breakdown (Max) : 45V
    Vce Saturation (Max) @ Ib, Ic : 2.5V @ 30mA, 1.5A
    Current - Collector Cutoff (Max) : 500μA
    DC Current Gain (hFE) (Min) @ Ic, Vce : 750 @ 1.5A, 3V
    Power - Max : 40W
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Through Hole
    Package / Case : TO-225AA, TO-126-3
    Supplier Device Package : TO-225AA

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