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羅斌森

  • BD809G

  • Manufacturer : ON Semiconductor
    Packaging : Tube
    Part Status : Active
    Transistor Type : NPN
    Current - Collector (Ic) (Max) : 10A
    Voltage - Collector Emitter Breakdown (Max) : 80V
    Vce Saturation (Max) @ Ib, Ic : 1.1V @ 300mA, 3A
    Current - Collector Cutoff (Max) : 1mA (ICBO)
    DC Current Gain (hFE) (Min) @ Ic, Vce : 15 @ 4A, 2V
    Power - Max : 90W
    Frequency - Transition : 1.5MHz
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Through Hole
    Package / Case : TO-220-3
    Supplier Device Package : TO-220AB

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