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羅斌森

  • BVSS123LT1G

  • Manufacturer : ON Semiconductor
    Packaging : Cut Tape (CT)
    Alternate Packaging
    Part Status : Active
    FET Type : N-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 100V
    Current - Continuous Drain (Id) @ 25°C : 170mA (Ta)
    Drive Voltage (Max Rds On, Min Rds On) : 10V
    Rds On (Max) @ Id, Vgs : 6 Ohm @ 100mA, 10V
    Vgs(th) (Max) @ Id : 2.8V @ 1mA
    Vgs (Max) : ±20V
    Input Capacitance (Ciss) (Max) @ Vds : 20pF @ 25V
    Power Dissipation (Max) : 225mW (Ta)
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Surface Mount
    Supplier Device Package : SOT-23-3
    Package / Case : TO-236-3, SC-59, SOT-23-3

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